ENGLA00183A
Wideband High Gain LNA DIE, 2 to 18 GHz
The ENGLA00183A is a Wideband High Gain Low-noise Amplifier (LNA) operating across 2 to 18 GHz. The design is 50 ohm matched and includes on board bias circuitry. The amplifier offers 30 dB gain with 3 dB positive gain slope to overcome high frequency roll–off due to interconnect losses; 2.7 dB de-embedded noise figure; and greater than 25 dBm output third-order intercept point (OIP3) across the band, at room temperature. The MMIC has gold backside metallization and is designed to be silver epoxy or gold-tin solder attached. The RF interconnects are designed to account for wire bonds to external 50 ohm microstrip lines for optimal integrated return loss. No additional ground interconnects are required.
Product Specifications
- Part Number
- ENGLA00183A
- Description
- Wideband High Gain LNA DIE, 2 to 18 GHz
- Min Frequency(MHz)
- 2000
- Max Frequency(MHz)
- 18000
- Gain(dB)
- 32.0
- NF(dB)
- 2.70
- OIP3(dBm)
- 27.0
- Output P1dB(dBm)
- 18.00
- Package Category
- Die
- RL In / Out (dB)
- 15/12
Features
- High Gain: 30 – 33 dB
- Low Noise Figure: 2.7 dB
- Positive Gain Slope
- Die Size : 3.18 x 1.65 x 0.10 mm / 0.125 x 0.065 x 0.004 inch
- Good I/O return loss : 15 / 12 dB
- RoHS* Compliant