ENGDA00139A
10 W, Wideband GaN Distributed Amplifier, DIE, 2 to 18 GHz
The ENGDA00139A is a wideband GaN MMIC distributed amplifier (DA) die which operates from 2 to 18 GHz. The design is 50 ohm matched and does not require any off-chip choke. The DA delivers a nominal gain of 10 dB with positive slope of about 1 dB. The DA delivers a nominal output power of 10 W and a peak PAE of near 30%. The amplifier has gold backside metallization and is designed for gold-tin eutectic or high thermal conductivity epoxy attachment.
Product Specifications
- Part Number
- ENGDA00139A
- Description
- 10 W, Wideband GaN Distributed Amplifier, DIE, 2 to 18 GHz
- Min Frequency(MHz)
- 2000
- Max Frequency(MHz)
- 18000
- Gain(dB)
- 10.0
- Bias Current(mA)
- 600
Features
- Wideband Performance
- Flat Gain and Power
- High PAE
- Good I/O Return Loss : 15 dB typical
- Size : 3.94 x 2.44x 0.075 mm / 0.155 x 0.096 x 0.003 inch