CMPA2H3B025D
GaN High Power Amplifier, 25 W 27 - 31 GHz
MACOM’s CMPA2H3B025D is a 25 W, MMIC HPA utilizing MACOM’s high performance, 0.15 μm GaN-on-SiC production process. This amplifier operates from 27 – 31 GHz and targets both defense and commercial satellite communications applications. Under saturation, this amplifier achieves 25 W of typical output power with 21 dB of large signal gain and > 25% power-added efficiency. Targeting an IM3 level of -25 dBc or better, this HPA delivers 10 W of output power with 26 dB of gain and 20% power-added efficiency. The bare die solution provides peak performance while minimizing required board space.
Product Specifications
- Part Number
- CMPA2H3B025D
- Description
- GaN High Power Amplifier, 25 W 27 - 31 GHz
- Min Frequency(MHz)
- 27000
- Max Frequency(MHz)
- 31000
- Gain(dB)
- 25.0
- Output P1dB(dBm)
- 44.20
- Bias Current(mA)
- 300
- Package Category
- Tray
Features
- Saturated Power: 25 W
- Power Added Efficiency: 26%
- Large Signal Gain: 21 dB
- Small Signal Gain: 25 dB
- Input Return Loss: <-10 dB
- Output Return Loss: <-10 dB
- IM3: <-25 dBc at 40 dBm Pout
- CW operation
Applications
- Ka-Band Satcom Uplink