CMPA1C1D060D
60 W; 12.7 to 13.25 GHz; 40 V; GaN MMIC Power Amplifier
The CMPA1C1D060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-?m gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity.
Product Specifications
- Part Number
- CMPA1C1D060D
- Description
- 60 W; 12.7 to 13.25 GHz; 40 V; GaN MMIC Power Amplifier
- Min Frequency(MHz)
- 12700
- Max Frequency(MHz)
- 13250
- Gain(dB)
- 26.0
- Package Category
- Die
Features
- Features 26 dB Small Signal Gain
- 60 W Typical PSAT
- Operation up to 40 V
- High Breakdown Voltage
- High Temperature Operation