CGY2190UH
Low Noise Amplifier, W-Band
The CGY2190UH/C2 is a high-performance GaAs Low Noise Amplifier MMIC designed to operate in the W-band. The die is manufactured using MACOM’s Advanced 70 nm gate length high Indium content mHEMT technology (D007IH). The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.
Product Specifications
- Part Number
- CGY2190UH
- Description
- Low Noise Amplifier, W-Band
- Min Frequency(MHz)
- 75000
- Max Frequency(MHz)
- 110000
- Gain(dB)
- 23.0
- Output P1dB(dBm)
- 1.00
- Bias Current(mA)
- 33
- NF(dB)
- 2.8
- Package Category
- Die
Features
- Suitable for W-Band Applications
- Wide Frequency Range: 75 - 100 GHz
- Small Signal Gain: 23 dB
- Noise Figure: 2.8 dB @ 90 GHz
- Output P1dB: 1 dBm
- Ultra Low Power consumption: (33 mW @ VD=1 & VG=0 V; 22 mW @ VD=1.2 & VG=-0.1 V)
- Chip Size: 2000 x 3000 μm
- Samples Available
- Space and MIL-STD Available
- RoHS* Compliant