CGHV14250

250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems

The CGHV14250 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar-amplifier applications. The transistor could be utilized for band-specific applications ranging from UHF through 1600 MHz. The package options are ceramic/metal flange and pill package.

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Product Specifications

Part Number
CGHV14250
Description
250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems
Min Frequency(MHz)
0
Max Frequency(MHz)
1600
Gain(dB)
18.0
Package Category
Flange, Pill

Features

  • FET Tuning range UHF through 1800 MHz
  • 330 W Typical Output Power
  • 18 dB Power Gain
  • 77 % Typical Drain Efficiency
  • < 0.3 dB Pulsed Amplitude Droop
  • Internally pre-matched on input; unmatched output

Technical Resources

Datasheet

Model Data (Sparameters)

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CGHV14250
250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems
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