CGH55015

10 W; C - band; Unmatched; GaN HEMT

Note: CGH55015P2 is Not Recommended for New Designs. Refer to CCG2H40010P. The CGH55015F2/CGH55015P2 is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities; which makes the CGH55015F2/ CGH55015P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down; flange and solder-down; pill packages. Based on appropriate external match adjustment; the CGH55015F2/CGH55015P2 is suitable for applications up to 6 GHz.

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Product Specifications

Part Number
CGH55015
Description
10 W; C - band; Unmatched; GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Gain(dB)
12.0
Package Category
Flange, Pill

Features

  • 4.5 to 6.0 GHz Operation
  • 12 dB Small Signal Gain at 5.65 GHz
  • 13 W typical PSAT
  • 60% Efficiency at PSAT
  • 28 V Operation

Technical Resources

Datasheet

Model Data (Sparameters)

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CGH55015
10 W; C - band; Unmatched; GaN HEMT
Order Get a Quote Get a Sample